Toshiba Electronic Devices & Storage Corporation has started shipping test samples of the “TW007D120E”, a 1200-volt (V) trench-gate silicon carbide (SiC) MOSFET designed for power supply systems in next-generation artificial intelligence (AI) data centres.
In a statement, Toshiba said the rapid growth of generative AI, along with increasing use of high-power AI servers and 800V high-voltage direct current (HVDC) architectures, is driving demand for more efficient power supply systems.
The company said the newly developed TW007D120E is designed to reduce power consumption while improving the miniaturisation and efficiency of power systems for next-generation AI data centres.
Built using Toshiba’s proprietary trench-gate structure, the device achieves industry-leading low on-resistance per unit area, helping to reduce conduction loss while also lowering switching loss.
Compared with existing Toshiba products, the new device is expected to enable higher efficiency operation and reduced heat generation in data centre power systems, improving overall system performance.
The product is packaged in a QDPAK package with top-side cooling, allowing higher power density and improved thermal performance in power stages.
Toshiba plans to begin mass production of the TW007D120E in fiscal year 2026 and expand its product lineup, including development for automotive applications.
The product is based on results from JPNP21029, a project subsidised by Japan’s New Energy and Industrial Technology Development Organization (NEDO).
